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FDD770N15A
N-Channel MOSFET
Description
isc N-Channel MOSFET
Transistor
FDD770N15A ·FEATURES ·Static drain-source on-resistance: RDS(on)≤77mΩ ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 150 VGS Gate-Source ...
INCHANGE
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