FDD86102LZ

isc N-Channel MOSFET Transistor FDD86102LZ ·FEATURES ·Static drain-source on-resistance: RDS(on)≤22.5mΩ ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·DC-DC Conversion ·Inverters ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 35 IDM Drain Current-Single Pulsed 40 PD Total Dissipation @TC=25℃ 54 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance MAX 2.3 UNIT ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID=250μA VGS(th) Gate Threshold Voltage VDS=VGS; ID=250μA RDS(on) Drain-Source On-Resistance VGS=10V; ID=8A IGSS Gate-Source Leakage Current VGS= ±20V IDSS Zero Gate Voltage Drain Current VDS=80V; VGS= 0V VSD Diode forward voltage IS=8A, VGS = 0V FDD86102LZ MIN TYP MAX UNIT 100 V 1 3 V 22.5 mΩ ±10 μA 1 μA 1.3 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. I...