isc N-Channel MOSFET Transistor
·FEATURES ·With TO-247 packaging ·With low gate drive requirements ·Easy to drive ·100% ...
isc N-Channel MOSFET
Transistor
·FEATURES ·With TO-247 packaging ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
500
VGSS ID IDM
Gate-Source Voltage
Drain Current-Continuous@Tc=25℃ Tc=100℃
Drain Current-Single Pulsed
±30
100 60
400
PD
Total Dissipation
2500
Tj
Operating Junction Temperature
-50~150
Tstg
Storage Temperature
-50~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
MAX 0.05
UNIT ℃/W
FDL100N50F
isc website：www.iscsemi.cn
1 isc & iscsemi is registered trademark
isc N-Channel MOSFET
Transistor
FDL100N50F
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA
500
V
VGS(th)
Gate Threshold Voltage
VDS=VGS; ID=0.25mA
3.0
5.0
V
RDS(on)
Drain-Source On-Resistance
VGS= 10V; ID=50A
43
55
mΩ
IGSS IDSS VSDF
Gate-Source Leakage Current Drain-Source Leakage Current Diode forward voltage
VGS= ±30V;VDS= 0V
VDS= 500V; VGS= 0V;@Tc=25℃ VDS= 400V; VGS= 0V;Tc=125℃
ISD=100A, VGS = 0 V
±0.1 μA
10 100
μA
1.5
V
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The informatio...
