isc N-Channel MOSFET Transistor
·FEATURES ·With TO-220 packaging ·High speed switching ·Low gate input resistance ·Stand...
isc N-Channel MOSFET
Transistor
·FEATURES ·With TO-220 packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Power supply ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
150
VGSS ID IDM
Gate-Source Voltage
Drain Current-Continuous;@Tc=25℃ Tc=100℃
Drain Current-Single Pulsed
±20
79 56
300
PD
Total Dissipation
310
Tj
Operating Junction Temperature
175
Tstg
Storage Temperature
-55~175
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
MAX 0.48 62
UNIT ℃/W ℃/W
FDP2532
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isc N-Channel MOSFET
Transistor
FDP2532
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA
150
V
VGS(th)
Gate Threshold Voltage
VDS=VGS; ID=0.25mA
2.0
4.0
V
RDS(on)
Drain-Source On-Resistance
VGS= 10V; ID=33A
14
16
mΩ
IGSS IDSS VSDF
Gate-Source Leakage Current Drain-Source Leakage Current Diode forward voltage
VGS=±20V;VDS= 0V
VDS= 120V; VGS= 0V;Tj=25℃ VDS= 120V; VGS= 0V;Tj=150℃
ISD=1A, VGS = 0 V
±0.1 μA
1 250
μA
1.0
V
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