isc N-Channel MOSFET Transistor
FMH30N60S1FD
·FEATURES ·With TO-3PN packaging ·High speed switching ·Standard level ga...
isc N-Channel MOSFET
Transistor
FMH30N60S1FD
·FEATURES ·With TO-3PN packaging ·High speed switching ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Power supply ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
600
VGSS ID IDM
Gate-Source Voltage
Drain Current-Continuous@Tc=25℃ Tc=100℃
Drain Current-Single Pulsed
±30
30 19
90
PD
Total Dissipation
220
Tj
Operating Junction Temperature
-55~150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
MAX 0.46
UNIT ℃/W
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isc N-Channel MOSFET
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID=0.25mA
VGS(th)
Gate Threshold Voltage
VDS=±30V; ID=1.0mA
RDS(on)
Drain-Source On-Resistance
VGS= 10V; ID=15A
IGSS
Gate-Source Leakage Current
VGS= ±30V;VDS= 0V
IDSS
Drain-Source Leakage Current
VDS= 600V; VGS= 0;
VSDF
Diode forward voltage
ISD=30A; VGS = 0V
FMH30N60S1FD
MIN TYP MAX UNIT
600
V
3.0
5.0
V
111
132
mΩ
±0.1 μA
25
μA
1.35
V
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