Isc N-Channel MOSFET Transistor
FQB70N08
·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ...
Isc N-Channel MOSFET
Transistor
FQB70N08
·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
80
VGSS ID IDM
Gate-Source Voltage
Drain Current-ContinuousTc=25℃ Tc=100℃
Drain Current-Single Pulsed
±25
70 49.5
280
PD
Total Dissipation @TC=25℃
155
Tch
Max. Operating Junction Temperature
175
Tstg
Storage Temperature
-55~175
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
MAX 0.97 62.5
UNIT ℃/W ℃/W
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Isc N-Channel MOSFET
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID=0.25mA
VGS(th)
Gate Threshold Voltage
VDS=VGS; ID=0.25mA
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID=35A
IGSS IDSS VSDF
Gate-Source Leakage Current
VGS= ±25V;VDS=0V
Drain-Source Leakage Current
VDS=80V; VGS= 0V;Tj=25℃ VDS=64V; VGS= 0V;Tj=125℃
Diode forward voltage
ISD=70A, VGS = 0 V
FQB70N08
MIN TYP MAX UNIT
80
V
2.0
4.0
V
13
17
mΩ
±0.1 μA
1 10
μA
1.5
V
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