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IPP05CN10N Dataheets PDF



Part Number IPP05CN10N
Manufacturers Infineon
Logo Infineon
Description Power-Transistor
Datasheet IPP05CN10N DatasheetIPP05CN10N Datasheet (PDF)

IPB05CN10N G IPI05CN10N G IPP05CN10N G OptiMOS®2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary V DS R DS(on),max (TO 263) ID 100 V 5.1 mΩ 100 A • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification Type IPB05CN10N G IPI05CN10N G IPP05CN10N G Pac.

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IPB05CN10N G IPI05CN10N G IPP05CN10N G OptiMOS®2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary V DS R DS(on),max (TO 263) ID 100 V 5.1 mΩ 100 A • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification Type IPB05CN10N G IPI05CN10N G IPP05CN10N G Package Marking PG-TO263-3 05CN10N PG-TO262-3 05CN10N PG-TO220-3 05CN10N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID T C=25 °C2) T C=100 °C Pulsed drain current3) I D,pulse T C=25 °C Avalanche energy, single pulse E AS I D=100 A, R GS=25 Ω Reverse diode dv /dt dv /dt I D=100 A, V DS=80 V, di /dt =100 A/µs, T j,max=175 °C Gate source voltage 4) V GS Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 Value 100 100 400 826 6 ±20 300 -55 ... 175 55/175/56 Unit A mJ kV/µs V W °C Rev. 1.07 page 1 2007-08-29 IPB05CN10N G IPI05CN10N G IPP05CN10N G Parameter Symbol Conditions min. Values typ. Unit max. Thermal characteristics Thermal resistance, junction - case R thJC - Thermal resistance, R thJA minimal footprint - junction - ambient 6 cm2 cooling area5) - - 0.5 K/W - 62 - 40 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 100 - Gate threshold voltage V GS(th) V DS=V GS, I D=250 µA 2 3 Zero gate voltage drain current I DSS V DS=80 V, V GS=0 V, T j=25 °C - 0.1 -V 4 1 µA V DS=80 V, V GS=0 V, T j=125 °C - Gate-source leakage current I GSS V GS=20 V, V DS=0 V - Drain-source on-state resistance R DS(on) V GS=10 V, I D=100 A, TO220, TO262 - 10 100 1 100 nA 4.1 5.4 mΩ Gate resistance Transconductance V GS=10 V, I D=100 A, - TO263 3.8 5.1 RG - 1.8 -Ω g fs |V DS|>2|I D|R DS(on)max, I D=100 A 81 162 -S 1)J-STD20 and JESD22 2) Current is limited by bondwire; with an R thJC=0.5 K/W the chip is able to carry 161 A. 3) See figure 3 4) Tjmax=150 °C and duty cycle D=0.01 for Vgs<-5V 5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.07 page 2 2007-08-29 Parameter Symbol Conditions IPB05CN10N G IPI05CN10N G IPP05CN10N G min. Values typ. Unit max. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time C iss - C oss V GS=0 V, V DS=50 V, f =1 MHz - C rss - t d(on) - tr V DD=50 V, V GS=10 V, - t d(off) I D=50 A, R G=1.6 Ω - tf - 9050 1370 75 28 42 64 21 12000 pF 1820 112 42 ns 63 96 31 Gate Charge Characteristics6) Gate to source charge Gate to drain charge Switching charge Gate charge total Gate plateau voltage Output charge Q gs - Q gd - Q sw V DD=50 V, I D=100 A, V GS=0 to 10 V - Qg - V plateau - Q oss V DD=50 V, V GS=0 V - 46 61 nC 32 48 51 73 136 181 5.1 -V 145 193 nC Reverse Diode Diode continous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge IS I S,pulse T C=25 °C V SD V GS=0 V, I F=100 A, T j=25 °C t rr V R=50 V, I F=I S, Q rr di F/dt =100 A/µs - - 100 A - - 400 - 1.0 1.2 V - 110 ns - 360 - nC 6) See figure 16 for gate charge parameter definition Rev. 1.07 page 3 2007-08-29 5 Typ. output characteristics I D=f(V DS); T j=25 °C parameter: V GS 400 8V 10 V 7V 6.5 V 320 240 6V IPB05CN10N G IPI05CN10N G IPP05CN10N G 6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 °C parameter: V GS 15 12 4.5 V 9 5V 5.5 V I D [A] R DS(on) [mΩ] 160 6 5.5 V 6V 10 V 80 3 5V 4.5 V 0 0 0 1 2 3 4 5 0 V DS [V] 50 100 150 I D [A] 7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 300 8 Typ. forward transconductance g fs=f(I D); T j=25 °C 200 I D [A] g fs [S] 250 160 200 120 150 80 100 175 °C 25 °C 40 50 0 0 Rev. 1.07 2 4 6 V GS [V] 0 8 0 page 4 50 100 I D [A] 150 2007-08-29 1 Power dissipation P tot=f(T C) IPB05CN10N G IPI05CN10N G IPP05CN10N G 2 Drain current I D=f(T C); V GS≥10 V 350 120 P tot [W] I D [A] 300 100 250 80 200 60 150 40 100 20 50 0 0 0 50 100 150 200 0 50 100 150 200 T C [°C] T C [°C] I D [A] Z thJC [K/W] 3 Safe operating area I D=f(V DS); T C=25 °C; D =0 parameter: t p 103 limited by on-state resistance 102 10 ms DC 1 µs 10 µs 100 µs 1 ms 101 4 Max. transient thermal impedance Z thJC=f(t p) parameter: D =t p/T 100 0.5 10-1 0.2 0.1 0.05 0.02 0.01 10-2 single pulse 100 10-1 Rev. 1.07 100 101 1.


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