Document
IPB05CN10N G IPI05CN10N G IPP05CN10N G
OptiMOS®2 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)
Product Summary V DS R DS(on),max (TO 263) ID
100 V 5.1 mΩ 100 A
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
Type
IPB05CN10N G
IPI05CN10N G
IPP05CN10N G
Package Marking
PG-TO263-3 05CN10N
PG-TO262-3 05CN10N
PG-TO220-3 05CN10N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
T C=25 °C2)
T C=100 °C
Pulsed drain current3)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS
I D=100 A, R GS=25 Ω
Reverse diode dv /dt
dv /dt
I D=100 A, V DS=80 V, di /dt =100 A/µs, T j,max=175 °C
Gate source voltage 4)
V GS
Power dissipation
P tot
T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value 100 100 400 826
6
±20 300 -55 ... 175 55/175/56
Unit A
mJ kV/µs V W °C
Rev. 1.07
page 1
2007-08-29
IPB05CN10N G IPI05CN10N G IPP05CN10N G
Parameter
Symbol Conditions
min.
Values typ.
Unit max.
Thermal characteristics
Thermal resistance, junction - case R thJC
-
Thermal resistance,
R thJA minimal footprint
-
junction - ambient
6 cm2 cooling area5)
-
-
0.5 K/W
-
62
-
40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
100
-
Gate threshold voltage
V GS(th) V DS=V GS, I D=250 µA
2
3
Zero gate voltage drain current
I DSS
V DS=80 V, V GS=0 V, T j=25 °C
-
0.1
-V 4
1 µA
V DS=80 V, V GS=0 V, T j=125 °C
-
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
Drain-source on-state resistance
R DS(on)
V GS=10 V, I D=100 A, TO220, TO262
-
10
100
1
100 nA
4.1
5.4 mΩ
Gate resistance Transconductance
V GS=10 V, I D=100 A,
-
TO263
3.8
5.1
RG
-
1.8
-Ω
g fs
|V DS|>2|I D|R DS(on)max, I D=100 A
81
162
-S
1)J-STD20 and JESD22
2) Current is limited by bondwire; with an R thJC=0.5 K/W the chip is able to carry 161 A.
3) See figure 3
4) Tjmax=150 °C and duty cycle D=0.01 for Vgs<-5V 5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air.
Rev. 1.07
page 2
2007-08-29
Parameter
Symbol Conditions
IPB05CN10N G IPI05CN10N G IPP05CN10N G
min.
Values typ.
Unit max.
Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time
C iss
-
C oss
V GS=0 V, V DS=50 V, f =1 MHz
-
C rss
-
t d(on)
-
tr
V DD=50 V, V GS=10 V,
-
t d(off)
I D=50 A, R G=1.6 Ω
-
tf
-
9050 1370
75 28 42 64 21
12000 pF 1820 112
42 ns 63 96 31
Gate Charge Characteristics6) Gate to source charge Gate to drain charge Switching charge Gate charge total Gate plateau voltage Output charge
Q gs
-
Q gd
-
Q sw
V DD=50 V, I D=100 A, V GS=0 to 10 V
-
Qg
-
V plateau
-
Q oss
V DD=50 V, V GS=0 V
-
46
61 nC
32
48
51
73
136
181
5.1
-V
145
193 nC
Reverse Diode Diode continous forward current Diode pulse current
Diode forward voltage
Reverse recovery time Reverse recovery charge
IS I S,pulse
T C=25 °C
V SD
V GS=0 V, I F=100 A, T j=25 °C
t rr
V R=50 V, I F=I S,
Q rr
di F/dt =100 A/µs
-
-
100 A
-
-
400
-
1.0
1.2 V
-
110
ns
-
360
- nC
6) See figure 16 for gate charge parameter definition
Rev. 1.07
page 3
2007-08-29
5 Typ. output characteristics I D=f(V DS); T j=25 °C parameter: V GS
400
8V
10 V
7V
6.5 V
320
240
6V
IPB05CN10N G IPI05CN10N G IPP05CN10N G
6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 °C parameter: V GS
15
12
4.5 V
9
5V
5.5 V
I D [A] R DS(on) [mΩ]
160
6
5.5 V
6V
10 V
80
3
5V
4.5 V
0
0
0
1
2
3
4
5
0
V DS [V]
50
100
150
I D [A]
7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j
300
8 Typ. forward transconductance g fs=f(I D); T j=25 °C
200
I D [A] g fs [S]
250 160
200 120
150
80 100
175 °C
25 °C
40 50
0 0
Rev. 1.07
2
4
6
V GS [V]
0
8
0
page 4
50
100
I D [A]
150
2007-08-29
1 Power dissipation P tot=f(T C)
IPB05CN10N G IPI05CN10N G IPP05CN10N G
2 Drain current I D=f(T C); V GS≥10 V
350
120
P tot [W] I D [A]
300 100
250 80
200 60
150 40
100
20 50
0
0
0
50
100
150
200
0
50
100
150
200
T C [°C]
T C [°C]
I D [A] Z thJC [K/W]
3 Safe operating area I D=f(V DS); T C=25 °C; D =0 parameter: t p
103
limited by on-state resistance
102
10 ms
DC
1 µs 10 µs
100 µs 1 ms
101
4 Max. transient thermal impedance Z thJC=f(t p) parameter: D =t p/T
100
0.5
10-1 0.2
0.1
0.05
0.02
0.01
10-2
single pulse
100 10-1
Rev. 1.07
100
101
1.