FMH30N60S1FD

FMH30N60S1FD http://www.fujielectric.com/products/semiconductor/ FUJI POWER MOSFET Super J-MOS series N-Channel enhancement mode power MOSFET Features Pb-free lead terminal RoHS compliant Outline Drawings [mm] TO-3P 15.5max 13 ± 0.2 10 ± 0.2 φ3.2± 0.1 41..55±± 00..22 14.5.5±±00.2.2 5 ±0.1 1.5 3 ±0.2 19.5 ±0.2 Applications For switching 14.5 ±0.2 1.6 +0.3 -0.1 2.2 +0.3 -0.1 5.45 ± 0.2 1.6 +0.3 -0.1 PRE-SOLDER 1.1 +0.2 -0.1 5.45 ± 0.2 0.5 +0.2 0 1.5 CONNECTION 1 GATE 2 DRAIN 3 SOURCE JEDEC : TO-3P DIMENSIONS ARE IN MILLIMETERS. Absolute Maximum Ratings at TC=25°C (unless otherwise specified) Parameter Drain-Source Voltage Symbol VDS VDSX Continuous Drain Current ID Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt IDP VGS IAR EAS dVDS/dt dV/dt -di/dt Maximum Power Dissipation PD Tch Operating and Storage Temperature range Tstg Note *1 : Limited by maximum channel temperature. Note *2 : Tch ≤ 150°C, See Fig.1 and Fig.2 Note *3 : Starting Tch=25°C, IAS=4A, L=97.3mH, VDD=60V, RG=50Ω, See Fig.1 and Fig.2 EAS limited by maximum channel temperature and avalanche current. Note *4 : IF ≤ -ID, -di/dt=100A/μs, VDS peak ≤ 600V, Tch ≤ 150°C. Note *5 : IF ≤ -ID, dV/dt=30kV/μs, VDS peak ≤ 600V, Tch ≤ 150°C. Characteristics 600 600 ±30 ±19 ±90 ±30 6.6 849.2 50 30 100 2.5 220 150 -55 to +...