Document
FMH47N60S1FD
http://www.fujielectric.com/products/semiconductor/ FUJI POWER MOSFET
Super J-MOS series
N-Channel enhancement mode power MOSFET
Features
Pb-free lead terminal RoHS compliant
Outline Drawings [mm]
TO-3P
15.5max 13 ± 0.2 10 ± 0.2
φ3.2± 0.1
41..55±± 00..22 14.5.5±±00.2.2
5 ±0.1
1.5 3 ±0.2
19.5 ±0.2
Applications For switching
14.5 ±0.2
1.6
+0.3 -0.1
2.2
+0.3 -0.1
5.45 ± 0.2
1.6
+0.3 -0.1
PRE-SOLDER
1.1
+0.2 -0.1
5.45 ± 0.2
0.5
+0.2 0
1.5
CONNECTION
1 GATE 2 DRAIN 3 SOURCE JEDEC : TO-3P DIMENSIONS ARE IN MILLIMETERS.
Absolute Maximum Ratings at TC=25°C (unless otherwise specified)
Parameter Drain-Source Voltage
Symbol
VDS VDSX
Continuous Drain Current
ID
Pulsed Drain Current Gate-Source Voltage
Repetitive and Non-Repetitive Maximum Avalanche Current
Non-Repetitive Maximum Avalanche Energy
Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt
IDP VGS
IAR
EAS
dVDS/dt dV/dt -di/dt
Maximum Power Dissipation
PD
Tch
Operating and Storage Temperature range
Tstg
Note *1 : Limited by maximum channel temperature. Note *2 : Tch ≤ 150°C, See Fig.1 and Fig.2 Note *3 : Starting Tch=25°C, IAS=5.7A, L=95.4mH, VDD=60V, RG=50Ω, See Fig.1 and Fig.2
EAS limited by maximum channel temperature and avalanche current. Note *4 : IF ≤ -ID, -di/dt=100A/μs, VDS peak ≤ 600V, Tch ≤ 150°C. Note *5 : IF ≤ -ID, dV/dt=25kV/μs, VDS peak ≤ 600V, Tch ≤ 150°C.
Characteristics
600 600 ±47 ±29.7 ±141 ±30
9.5
1689.9
50 25 100 2.5 390 150 -55 to +150
Electrical Characteristics at TC=25°C (unless otherwise specified) • Static Ratings
Parameter
Symbol Conditions
Drain-Source Breakdown Voltage Gate Threshold Voltage
BVDSS VGS(th)
Zero Gate Voltage Drain Current
IDSS
Gate-Source Leakage Current
IGSS
Drain-Source On-State Resistance Gate resistance
RDS(on) RG
ID=250μA VGS=0V
ID=2mA VDS=VGS
VDS=600V VGS=0V
VDS=480V VGS=0V
VGS= ± 30V VDS=0V
ID=23.5A VGS=10V
f=1MHz, open drain
Tch=25°C Tch=125°C
min. 600
3 -
Equivalent circuit schematic
②Drain
①② ③
① Gate
③Source
Unit V V A A A V
A
mJ
kV/μs kV/μs A/μs
W
°C °C
Remarks
VGS=-30V Tc=25°C Note*1 Tc=100°C Note*1 Note*1
Note *2
Note *3 VDS≤ 600V Note *4 Note *5 Ta=25°C TC=25°C
typ. 4 -
250 10 0.062 1.1
max. 5 25 -
100 0.074
-
Unit V V
μA
nA Ω Ω
1
8509
OCTOBER 2015
FMH47N60S1FD
• Dynamic Ratings
Parameter
Symbol Conditions
Forward Transconductance
Input Capacitance Output Capacitance Reverse Transfer Capacitance Effective output capacitance, energy related (Note *6)
gfs
Ciss Coss Crss
Co(er)
ID=23.5A VDS=25V
VDS=400V VGS=0V f=250kHz
VGS=0V VDS=0…400V
Effective output capacitance, time related (Note *7)
VGS=0V
Co(tr)
VDS=0…400V
ID=constant
Turn-On Time Turn-Off Time
td(on)
tr
VDD=400V, VGS=10V
td(off)
ID=23.5A, RG=13Ω See Fig.3 and Fig.4
tf
Total Gate Charge
QG
Gate-Source Charge
QGS
Gate-Drain Charge
QGD
Drain-Source crossover Charge
QSW
VDD=400V, ID=47A VGS=10V See Fig.5
Note *6 : Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 400V. Note *7 : Co(tr) is a fixed capacitance that gives the same charging times as Coss while VDS is rising from 0 to 400V.
• Reverse Diode Parameter Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Peak Reverse Recovery Current
Symbol IAV VSD trr Qrr Irp
Conditions
L=20.6mH,Tch=25°C See Fig.1 and Fig.2
IF=47A,VGS=0V Tch=25°C
IF=47A, VDD=400V -di/dt=100A/μs Tch=25°C See Fig.6 and Fig.7
Thermal Resistance
Parameter Channel to Case Channel to Ambient
Symbol
Rth(ch-c) Rth(ch-a)
FUJI POWER MOSFET http://www.fujielectric.com/products/semiconductor/
min.
17
-
-
-
-
typ.
35
3600 105 7.5
275
945
146 32 169 19 127 33 55 16
max.
-
-
-
-
-
Unit S pF
ns nC
min.
typ.
max.
Unit
9.5
-
-
A
-
1.1
1.35
V
-
210
-
ns
-
1.6
-
μC
-
15
-
A
min.
typ.
max.
Unit
-
-
0.32
°C/W
-
-
50
°C/W
2
FMH47N60S1FD
PD [W]
Allowable Power Dissipation PD=f(Tc)
400
350
300
250
200
150
100
50
0 0
160 140
25
50
75
100
125
150
Tc [°C]
Typical Output Characteristics ID=f(VDS):80µs pulse test, Tch=25°C
20V 10V
120
100
8V
80
7.5V
60
7V
40
6.5V
20
VGS=6V
0
0
5
10
15
20
25
VDS [V]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80µs pulse test, Tch=25°C
0.30
6V 6.5V 7V
7.5V
0.25 8V
0.20
0.15
10V
ID [A]
RDS(on) [Ω]
0.10
VGS=20V
0.05
RDS(on) [Ω]
ID [A]
ID [A]
FUJI POWER MOSFET http://www.fujielectric.com/products/semiconductor/
Safe Operating Area ID=f(VDS):Duty=0(Single pulse), Tc=25°C
100
t=
1µs
10µs
10
100µs 1
Power loss waveform :
0.1
Square waveform
PD
t
1ms
0.01 0.1
1
10
100
1000
VDS [V]
Typical Output Characteristics ID=f(VDS):80µs pulse test, Tch=150°C
100
20V
90
8V 10V
80
7.5V
70
60
7V
50 6.5V
40
30
6V
20
VGS=5.5V
10
0
0
5
10
15
20
25
VDS [V]
Typical .