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IPI05CNE8N Dataheets PDF



Part Number IPI05CNE8N
Manufacturers Infineon
Logo Infineon
Description Power-Transistor
Datasheet IPI05CNE8N DatasheetIPI05CNE8N Datasheet (PDF)

IPB051NE8N G IPI05CNE8N G IPP054NE8N G OptiMOS™2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary V DS R DS(on),max (TO 263) ID 85 V 5.1 mΩ 100 A • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification • Halogen-free according to IEC61249-2-21 Type IPB.

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IPB051NE8N G IPI05CNE8N G IPP054NE8N G OptiMOS™2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary V DS R DS(on),max (TO 263) ID 85 V 5.1 mΩ 100 A • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification • Halogen-free according to IEC61249-2-21 Type IPB051NE8N G IPI05CNE8N G IPP054NE8N G Package Marking PG-TO263-3 051NE8N PG-TO262-3 05CNE8N PG-TO220-3 054NE8N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID T C=25 °C2) T C=100 °C Pulsed drain current3) I D,pulse T C=25 °C Avalanche energy, single pulse E AS I D=100 A, R GS=25 Ω Reverse diode dv /dt dv /dt I D=100 A, V DS=68 V, di /dt =100 A/µs, T j,max=175 °C Gate source voltage 4) V GS Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 Value 100 100 400 826 6 ±20 300 -55 ... 175 55/175/56 Unit A mJ kV/µs V W °C Rev. 1.2 page 1 2010-01-14 IPB051NE8N G IPI05CNE8N G IPP054NE8N G Parameter Symbol Conditions min. Values typ. Unit max. Thermal characteristics Thermal resistance, junction - case R thJC - Thermal resistance, R thJA minimal footprint - junction - ambient 6 cm2 cooling area5) - - 0.5 K/W - 62 - 40 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Gate resistance Transconductance V (BR)DSS V GS=0 V, I D=1 mA 85 V GS(th) V DS=V GS, I D=250 µA 2 I DSS V DS=68 V, V GS=0 V, T j=25 °C - V DS=68 V, V GS=0 V, T j=125 °C - I GSS V GS=20 V, V DS=0 V - R DS(on) V GS=10 V, I D=100 A, TO220, TO262 - V GS=10 V, I D=100 A, - TO263 RG - g fs |V DS|>2|I D|R DS(on)max, I D=100 A 81 - -V 3 4 0.1 1 µA 10 100 1 100 nA 4.1 5.4 mΩ 3.8 5.1 1.8 -Ω 162 -S 1)J-STD20 and JESD22 2) Current is limited by bondwire; with an R thJC=0.5 K/W the chip is able to carry 161 A. 3) See figure 3 4) Tjmax=150 °C and duty cycle D=0.01 for Vgs<-5V 5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.2 page 2 2010-01-14 Parameter Symbol Conditions IPB051NE8N G IPI05CNE8N G IPP054NE8N G min. Values typ. Unit max. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time C iss - C oss V GS=0 V, V DS=40 V, f =1 MHz - C rss - t d(on) - tr V DD=40 V, V GS=10 V, - t d(off) I D=50 A, R G=1.6 Ω - tf - 9090 1710 120 28 42 64 21 12100 pF 2270 180 42 ns 61 96 31 Gate Charge Characteristics6) Gate to source charge Gate to drain charge Switching charge Gate charge total Gate plateau voltage Output charge Q gs - Q gd - Q sw V DD=40 V, I D=100 A, V GS=0 to 10 V - Qg - V plateau - Q oss V DD=40 V, V GS=0 V - 47 62 nC 31 46 50 72 135 180 5.1 -V 130 173 nC Reverse Diode Diode continous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge IS I S,pulse T C=25 °C V SD V GS=0 V, I F=100 A, T j=25 °C t rr V R=40 V, I F=I S, Q rr di F/dt =100 A/µs - - 100 A - - 400 - 1.0 1.2 V - 110 - ns - 345 - nC 6) See figure 16 for gate charge parameter definition Rev. 1.2 page 3 2010-01-14 1 Power dissipation P tot=f(T C) IPB051NE8N G IPI05CNE8N G IPP054NE8N G 2 Drain current I D=f(T C); V GS≥10 V 350 120 P tot [W] I D [A] 300 100 250 80 200 60 150 40 100 20 50 0 0 0 50 100 150 200 0 50 100 150 200 T C [°C] T C [°C] 3 Safe operating area I D=f(V DS); T C=25 °C; D =0 parameter: t p 1000 4 Max. transient thermal impedance Z thJC=f(t p) parameter: D =t p/T 100 100 10 1 µs 10 µs 100 µs 1 ms 10 ms DC 0.5 10-1 0.2 0.1 0.05 0.02 0.01 10-2 single pulse I D [A] Z thJC [K/W] 1 0.1 Rev. 1.2 1 10 V DS [V] 100 10-3 10-5 10-4 10-3 10-2 10-1 100 t p [s] page 4 2010-01-14 5 Typ. output characteristics I D=f(V DS); T j=25 °C parameter: V GS 400 8V 10 V 7V 6.5 V 320 240 6V IPB051NE8N G IPI05CNE8N G IPP054NE8N G 6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 °C parameter: V GS 15 12 4.5 V 9 5V 5.5 V I D [A] R DS(on) [mΩ] 160 6 5.5 V 6V 10 V 80 3 5V 4.5 V 0 0 0 1 2 3 4 5 0 V DS [V] 50 100 150 I D [A] 7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 300 8 Typ. forward transconductance g fs=f(I D); T j=25 °C 200 I D [A] g fs [S] 250 160 200 120 150 80 100 175 °C 25 °C 40 50 0 0 Rev..


IPB051NE8N IPI05CNE8N IPP054NE8N


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