Document
IPB051NE8N G IPI05CNE8N G IPP054NE8N G
OptiMOS™2 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)
Product Summary V DS R DS(on),max (TO 263) ID
85 V 5.1 mΩ 100 A
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
• Halogen-free according to IEC61249-2-21
Type
IPB051NE8N G
IPI05CNE8N G
IPP054NE8N G
Package Marking
PG-TO263-3 051NE8N
PG-TO262-3 05CNE8N
PG-TO220-3 054NE8N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
T C=25 °C2)
T C=100 °C
Pulsed drain current3)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS
I D=100 A, R GS=25 Ω
Reverse diode dv /dt
dv /dt
I D=100 A, V DS=68 V, di /dt =100 A/µs, T j,max=175 °C
Gate source voltage 4)
V GS
Power dissipation
P tot
T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value 100 100 400 826
6
±20 300 -55 ... 175 55/175/56
Unit A
mJ kV/µs V W °C
Rev. 1.2
page 1
2010-01-14
IPB051NE8N G IPI05CNE8N G IPP054NE8N G
Parameter
Symbol Conditions
min.
Values typ.
Unit max.
Thermal characteristics
Thermal resistance, junction - case R thJC
-
Thermal resistance,
R thJA minimal footprint
-
junction - ambient
6 cm2 cooling area5)
-
-
0.5 K/W
-
62
-
40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current
Gate-source leakage current Drain-source on-state resistance
Gate resistance Transconductance
V (BR)DSS V GS=0 V, I D=1 mA
85
V GS(th) V DS=V GS, I D=250 µA
2
I DSS
V DS=68 V, V GS=0 V, T j=25 °C
-
V DS=68 V, V GS=0 V, T j=125 °C
-
I GSS
V GS=20 V, V DS=0 V
-
R DS(on)
V GS=10 V, I D=100 A, TO220, TO262
-
V GS=10 V, I D=100 A,
-
TO263
RG
-
g fs
|V DS|>2|I D|R DS(on)max, I D=100 A
81
-
-V
3
4
0.1
1 µA
10
100
1
100 nA
4.1
5.4 mΩ
3.8
5.1
1.8
-Ω
162
-S
1)J-STD20 and JESD22
2) Current is limited by bondwire; with an R thJC=0.5 K/W the chip is able to carry 161 A.
3) See figure 3
4) Tjmax=150 °C and duty cycle D=0.01 for Vgs<-5V 5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air.
Rev. 1.2
page 2
2010-01-14
Parameter
Symbol Conditions
IPB051NE8N G IPI05CNE8N G IPP054NE8N G
min.
Values typ.
Unit max.
Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time
C iss
-
C oss
V GS=0 V, V DS=40 V, f =1 MHz
-
C rss
-
t d(on)
-
tr
V DD=40 V, V GS=10 V,
-
t d(off)
I D=50 A, R G=1.6 Ω
-
tf
-
9090 1710 120
28 42 64 21
12100 pF 2270 180
42 ns 61 96 31
Gate Charge Characteristics6) Gate to source charge Gate to drain charge Switching charge Gate charge total Gate plateau voltage Output charge
Q gs
-
Q gd
-
Q sw
V DD=40 V, I D=100 A, V GS=0 to 10 V
-
Qg
-
V plateau
-
Q oss
V DD=40 V, V GS=0 V
-
47
62 nC
31
46
50
72
135
180
5.1
-V
130
173 nC
Reverse Diode Diode continous forward current Diode pulse current
Diode forward voltage
Reverse recovery time Reverse recovery charge
IS I S,pulse
T C=25 °C
V SD
V GS=0 V, I F=100 A, T j=25 °C
t rr
V R=40 V, I F=I S,
Q rr
di F/dt =100 A/µs
-
-
100 A
-
-
400
-
1.0
1.2 V
-
110
- ns
-
345
- nC
6) See figure 16 for gate charge parameter definition
Rev. 1.2
page 3
2010-01-14
1 Power dissipation P tot=f(T C)
IPB051NE8N G IPI05CNE8N G IPP054NE8N G
2 Drain current I D=f(T C); V GS≥10 V
350
120
P tot [W] I D [A]
300 100
250 80
200 60
150 40
100
20 50
0
0
0
50
100
150
200
0
50
100
150
200
T C [°C]
T C [°C]
3 Safe operating area I D=f(V DS); T C=25 °C; D =0 parameter: t p
1000
4 Max. transient thermal impedance Z thJC=f(t p) parameter: D =t p/T
100
100 10
1 µs 10 µs 100 µs 1 ms
10 ms
DC
0.5
10-1 0.2
0.1
0.05
0.02
0.01
10-2
single pulse
I D [A] Z thJC [K/W]
1 0.1
Rev. 1.2
1
10
V DS [V]
100
10-3
10-5
10-4
10-3
10-2
10-1
100
t p [s]
page 4
2010-01-14
5 Typ. output characteristics I D=f(V DS); T j=25 °C parameter: V GS
400
8V
10 V
7V
6.5 V
320
240
6V
IPB051NE8N G IPI05CNE8N G IPP054NE8N G
6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 °C parameter: V GS
15
12
4.5 V
9
5V
5.5 V
I D [A] R DS(on) [mΩ]
160
6
5.5 V
6V
10 V
80
3
5V
4.5 V
0
0
0
1
2
3
4
5
0
V DS [V]
50
100
150
I D [A]
7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j
300
8 Typ. forward transconductance g fs=f(I D); T j=25 °C
200
I D [A] g fs [S]
250 160
200 120
150
80 100
175 °C
25 °C
40 50
0 0
Rev..