IPB051NE8N G IPI05CNE8N G IPP054NE8N G
OptiMOS™2 Power-Transistor
Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on)
Product Summary V DS R DS(on),max (TO 263) ID
85 V 5.1 mΩ 100 A
175 °C operating temperature
Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for ...
