Isc N-Channel MOSFET Transistor
IPB65R190E6
·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate char...
Isc N-Channel MOSFET
Transistor
IPB65R190E6
·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
650
VGSS ID IDM
Gate-Source Voltage
Drain Current-ContinuousTc=25℃ Tc=100℃
Drain Current-Single Pulsed
±30
20.2 12.8
66
PD
Total Dissipation @TC=25℃
151
Tch
Max. Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
MAX 0.83 62
UNIT ℃/W ℃/W
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Isc N-Channel MOSFET
Transistor
IPB65R190E6
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID=1mA
650
V
VGS(th)
Gate Threshold Voltage
VDS=VGS; ID=0.73mA
2.5
3.5
V
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID=7.3A
170 190 mΩ
IGSS IDSS VSDF
Gate-Source Leakage Current
VGS= ±20V;VDS=0V
Drain-Source Leakage Current
VDS=600V; VGS= 0V;Tj=25℃ VDS=600V; VGS= 0V;Tj=150℃
Diode forward voltage
ISD=11A, VGS = 0V
±0.1 μA
1 100
μA
0.9
V
NOTICE： ISC reserves the rights to make changes o...
