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IPB65R660CFD Dataheets PDF



Part Number IPB65R660CFD
Manufacturers INCHANGE
Logo INCHANGE
Description N-Channel MOSFET
Datasheet IPB65R660CFD DatasheetIPB65R660CFD Datasheet (PDF)

Isc N-Channel MOSFET Transistor IPB65R660CFD ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGSS ID IDM Gate-Source Voltage Drain Current-ContinuousTc=25℃ Tc=100℃ Drain Current-Single Pulsed ±30 6.0 .

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