isc N-Channel MOSFET Transistor
·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistan...
isc N-Channel MOSFET
Transistor
·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
IPB083N15N5LF
·APPLICATIONS ·Power supply ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
150
VGSS ID IDM
Gate-Source Voltage Drain Current-Continuous;Tc=25℃
Tc=100℃
Drain Current-Single Pulsed
±20
105 66
420
PD
Total Dissipation
179
Tj
Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
MAX 0.7 40
UNIT ℃/W ℃/W
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isc N-Channel MOSFET
Transistor
IPB083N15N5LF
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID=1mA
150
V
VGS(th)
Gate Threshold Voltage
VDS=VGS; ID=0.134mA
3.3
4.9
V
RDS(on)
Drain-Source On-Resistance
VGS= 10V; ID=100A
6.9
8.3 mΩ
IGSS IDSS VSDF
Gate-Source Leakage Current Drain-Source Leakage Current Diode forward voltage
VGS=±20V;VDS= 0V
VDS=120V; VGS= 0V;Tc=25℃ VDS=120V; VGS= 0V; Tc=125℃
ISD=100A, VGS = 0 V
±5 μA
2 100
μA
0.99 1.2
V
NOTICE： ISC res...
