Document
IPB083N15N5LF
MOSFET
OptiMOSTM5LinearFET,150V
Features
•Idealforhot-swapande-fuseapplications •Verylowon-resistanceRDS(on) •WidesafeoperatingareaSOA •N-channel,normallevel •100%avalanchetested •Pb-freeplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplications •Halogen-freeaccordingtoIEC61249-2-21
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
150
V
RDS(on),max
8.3
mΩ
ID
105
A
Ipulse(VDS=56V,tp=10 ms)
5.6
A
D²PAK
Drain Pin 2, Tab
Gate Pin 1
Source Pin 3
Type/OrderingCode IPB083N15N5LF
Package PG-TO 263-3
Marking 083N15LF
RelatedLinks -
1) J-STD20 and JESD22
Final Data Sheet
1
Rev.2.0,2017-04-04
OptiMOSTM5LinearFET,150V
IPB083N15N5LF
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Final Data Sheet
2
Rev.2.0,2017-04-04
OptiMOSTM5LinearFET,150V
IPB083N15N5LF
1Maximumratings
atTC=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current
Pulsed drain current2) Avalanche energy, single pulse3) Gate source voltage Power dissipation
Operating and storage temperature
ID
ID,pulse EAS VGS Ptot Tj,Tstg
Min. -20 -
-55
Values
Typ. Max.
-
105
-
66
-
14
-
420
-
10
-
20
-
179
-
150
Unit Note/TestCondition
VGS=10V,TC=25°C A VGS=10V,TC=100°C
VGS=10V,TC=25°C,RthJA=40K/W1)
A TC=25°C
mJ ID=25A,RGS=25Ω
V-
W TC=25°C
°C
IEC climatic category; DIN IEC 68-1: 55/150/56
2Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Symbol
Thermal resistance, junction - case
Device on PCB, minimal footprint
Device on PCB, 6 cm² cooling area1)
RthJC RthJA RthJA
Min. -
Values Typ. Max. 0.45 0.7
Unit Note/TestCondition K/W -
-
-
62 K/W -
-
-
40 K/W -
1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 2) See Diagram 3 for more detailed information 3) See Diagram 13 for more detailed information
Final Data Sheet
3
Rev.2.0,2017-04-04
OptiMOSTM5LinearFET,150V
IPB083N15N5LF
3Electricalcharacteristics
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage Gate threshold voltage
Zero gate voltage drain current
V(BR)DSS VGS(th)
IDSS
Gate-source leakage current
Drain-source on-state resistance Gate resistance1) Transconductance
IGSS
RDS(on) RG gfs
Min. 150 3.3 -
9
Values
Typ. Max.
-
-
4.1 4.9
1
2
10 100
2
5
-2
-5
6.9 8.3
28 42
18 -
Unit Note/TestCondition
V VGS=0V,ID=1mA
V
VDS=VGS,ID=134µA
µA
VDS=120V,VGS=0V,Tj=25°C VDS=120V,VGS=0V,Tj=125°C
µA
VGS=20V,VDS=0V VGS=-10V,VDS=0V
mΩ VGS=10V,ID=100A
Ω-
S
|VDS|>2|ID|RDS(on)max,ID=52A
Table5Dynamiccharacteristics1)
Parameter
Symbol
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Min. -
-
-
-
Values Typ. Max. 160 210 740 960 11 -
7
-
46 -
25 -
6
-
Unit Note/TestCondition
pF VGS=0V,VDS=75V,f=1MHz
pF VGS=0V,VDS=75V,f=1MHz
pF VGS=0V,VDS=75V,f=1MHz
ns
VDD=75V,VGS=10V,ID=52A, RG,ext=1.6Ω
ns
VDD=75V,VGS=10V,ID=52A, RG,ext=1.6Ω
ns
VDD=75V,VGS=10V,ID=52A, RG,ext=1.6Ω
ns
VDD=75V,VGS=10V,ID=52A, RG,ext=1.6Ω
Table6Gatechargecharacteristics2)
Parameter
Symbol
Gate to source charge Gate to.