IPB123N10N3G

Isc N-Channel MOSFET Transistor IPB123N10N3G ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGSS ID IDM Gate-Source Voltage Drain Current-ContinuousTc=25℃ Tc=100℃ Drain Current-Single Pulsed ±20 58 42 232 PD Total Dissipation @TC=25℃ 94 Tch Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 1.6 40 UNIT ℃/W ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark Isc N-Channel MOSFET Transistor IPB123N10N3G ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 1mA 100 V VGS(th) Gate Threshold Voltage VDS=VGS; ID=0.046mA 2.0 3.5 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID=46A 11 12.6 mΩ IGSS IDSS VSDF Gate-Source Leakage Current VGS= ±20V;VDS= 0V Drain-Source Leakage Current VDS=100V; VGS= 0V;Tj=25℃ VDS=100V; VGS= 0V;Tj=125℃ Diode forward voltage ISD=46A, VGS = 0 Vs ±0.1 μA 1 100 μA 0.9 1.2 V NOTICE： ISC reserves the rights to make ch...