IPS040N03L

isc N-Channel MOSFET Transistor ·FEATURES ·With TO-251(IPAK) packaging ·High speed switching ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·DC-DC converters ·Motor control ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 30 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous @Tc=25℃ Tc=100℃ Drain Current-Single Pulsed ±20 90 76 400 PD Total Dissipation 79 Tj Operating Junction Temperature -55~175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 1.9 50 UNIT ℃/W ℃/W IPS040N03L isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor IPS040N03L ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 1.0mA VGS(th) Gate Threshold Voltage VDS=VGS; ID=0.25mA RDS(on) Drain-Source On-Resistance VGS= 10V; ID=30A IGSS IDSS VSDF Gate-Source Leakage Current Drain-Source Leakage Current Diode forward voltage VGS= ±20V;VDS= 0V VDS= 30V; VGS= 0V;Tj=25℃ VDS= 30V; VGS= 0V;Tj=125℃ ISD=30A, VGS = 0 V MIN TYP MAX UNIT 30 V 1.0 2.2 V 4.7 5.9 mΩ ±0.1 μA 1 100 μA 1.1 V NOTICE： ISC reserves the rights to make changes...