isc N-Channel MOSFET Transistor
·FEATURES ·With TO-251(IPAK) packaging ·High speed switching ·Easy to use ·100% avalanch...
isc N-Channel MOSFET
Transistor
·FEATURES ·With TO-251(IPAK) packaging ·High speed switching ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Power supply ·DC-DC converters ·Motor control ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
800
VGSS
Gate-Source Voltage
±30
ID
Drain Current-Continuous
1.9
IDM
Drain Current-Single Pulsed
PD
Total Dissipation
Tj
Operating Junction Temperature
6 42 -55~150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
MAX 3 62
UNIT ℃/W ℃/W
IPU80R2K8CE
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isc N-Channel MOSFET
Transistor
IPU80R2K8CE
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA
800
V
VGS(th)
Gate Threshold Voltage
VDS=VGS; ID=0.12mA
2.1
3.9
V
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID=1.1A
2.4
2.8
Ω
IGSS IDSS VSDF
Gate-Source Leakage Current Drain-Source Leakage Current Diode forward voltage
VGS= ±20V;VDS= 0V
VDS= 800V; VGS= 0V;Tj=25℃ VDS= 800V; VGS= 0V;Tj=150℃
ISD=1.9A, VGS =0V
±0.1 μA
5 250
μA
1.2
V
NOTICE： ISC reserves the rights to make changes of the cont...
