Isc N-Channel MOSFET Transistor
IRF3007S
·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ...
Isc N-Channel MOSFET
Transistor
IRF3007S
·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
75
VGSS ID IDM
Gate-Source Voltage
Drain Current-ContinuousTc=25℃ Tc=100℃
Drain Current-Single Pulsed
±20
62 44
320
PD
Total Dissipation @TC=25℃
120
Tch
Max. Operating Junction Temperature
175
Tstg
Storage Temperature
-55~175
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
MAX 1.25 62
UNIT ℃/W ℃/W
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Isc N-Channel MOSFET
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA
VGS(th)
Gate Threshold Voltage
VDS=VGS; ID=0.25mA
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID=48A
IGSS IDSS VSDF
Gate-Source Leakage Current
VGS= ±20V;VDS= 0V
Drain-Source Leakage Current
VDS=75V; VGS= 0V;Tj=25℃ VDS=60V; VGS= 0V;Tj=125℃
Diode forward voltage
ISD=48A, VGS = 0 Vs
IRF3007S
MIN TYP MAX UNIT
75
V
2.0
3.5
V
10.5 12.6 mΩ
±0.2 μA
20 250
μA
1.3
V
NOTICE： ISC reserves the rights to make changes of th...
