Document
SMD Type
N-Channel MOSFET
IRF3808S (KRF3808S)
Ƶ Features
ƽ VDSS = 75V ƽ RDS(ON) = 0.007 ƽ ID = 106A ļ ƽ Advanced Process Technology ƽ Ultra Low On-Resistance ƽ Dynamic dv/dt Rating ƽ 175°C Operating Temperature ƽ Fast Switching ƽ Repetitive Avalanche Allowed up to Tjmax
D
TraMnOsiSsFtoErsT
G S
Ƶ Absolute Maximum Ratings Ta = 25ć
Drain-Source Voltage
Parameter
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current ķ Power Dissipation Single Pulse Avalanche Energy ĸ Avalanche Current ķ Repetitive Avalanche Energy Ľ Peak Diode Recovery dv/dt Ĺ Thermal Resistance Junction-to-Case Thermal Resistance.Junction- to-Ambient (PCB Mounted, Steady State) ** Junction Temperature Storage Temperature Range
TC=25ć TC=100ć
TC=25ć
Symbol VDS VGS
ID
IDM PD EAS IAR EAR dv/dt RthJC
RthJA
TJ Tstg
Rating 75 ±20
106 ļ 75 ļ 550 200 430
82 See Fig.12a, 12b, 15, 16
5.5 0.75
40
175 -55 to 175
Unit V
A
W mJ A mJ V/ns
ć/W
ć
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SMD Type
TraMnOsiSstFoErsT
N-Channel MOSFET IRF3808S (KRF3808S)
Ƶ Electrical Characteristics @ TJ = 25ć(unless otherwise specified)
Parameter Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Total Gate Charge Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time
Internal Drain Inductance
Internal Source Inductance
Symbol VDSS
IDSS
IGSS VGS(th) RDS(On)
gFS Qg Qgs Qgd td(on) tr td(off) tf
LD
LS
Test Conditions ID = 250 ȝA, VGS = 0 V VDS = 75 V, VGS = 0 V VDS = 60 V, VGS = 0 V, TJ = 150 ć VDS=0V, VGS=±20V VDS = 10 V , ID = 250 ȝA VGS = 10 V, ID = 82 A VDS = 25 V, ID = 82 A
ID = 82 A VDS = 60 V VGS = 10 V ĺ
VDD = 38 V ID = 82 A RG = 2.5 ȍ VGS = 10 V ĺ
Between lead,
D
6mm (0.25in.)
from package
G
and center of die contact
S
Min Typ Max Unit
75
V
20 ȝA
250
±200 nA
2.0
4.0 V
7.0 mȍ
100
S
150 220
31 47 nC
50 76
16
140 ns
68
120
4.5 nH
7.5
Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Ļ Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge
Ciss Coss Crss Coss Coss Coss eff.
trr Qrr
VGS = 0 V VDS = 25 V f = 1.0 MHz. See Fig. 5
VGS = 0 V, VDS = 1.0 V, f = 1.0 MHz VGS = 0 V, VDS = 60 V, f = 1.0 MHz VGS = 0 V, VDS = 0V to 60V
TJ = 25 ć, IF = 82 A dI/dt = 100 A/ȝs ĺ
5310 890 130
pF 6010 570 1140
140 ns 510 nC
Maximum Body-Diode Continuous Current Body-Diode Pulsed Source Current ķ
IS
MOSFET symbol
showing the
integral reverse
ISM
p-n junction diode.
D
G S
106 A
550
Diode Forward Voltage
VSD
TJ = 25 ć, IS = 82A, VGS = 0V ĺ
1.3 V
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes: ķ Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). ĸ Starting TJ = 25°C, L = 0.130mH, RG = 25 , IAS = 82A. (See Figure 12). Ĺ ISD İ 82.