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IRF3808S Dataheets PDF



Part Number IRF3808S
Manufacturers Kexin
Logo Kexin
Description N-Channel MOSFET
Datasheet IRF3808S DatasheetIRF3808S Datasheet (PDF)

SMD Type N-Channel MOSFET IRF3808S (KRF3808S) Ƶ Features ƽ VDSS = 75V ƽ RDS(ON) = 0.007Ÿ ƽ ID = 106A ļ ƽ Advanced Process Technology ƽ Ultra Low On-Resistance ƽ Dynamic dv/dt Rating ƽ 175°C Operating Temperature ƽ Fast Switching ƽ Repetitive Avalanche Allowed up to Tjmax D TraMnOsiSsFtoErsT G S Ƶ Absolute Maximum Ratings Ta = 25ć Drain-Source Voltage Parameter Gate-Source Voltage Continuous Drain Current, VGS @ 10V Pulsed Drain Current ķ Power Dissipation Single Pulse Avalanche Energy ĸ .

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SMD Type N-Channel MOSFET IRF3808S (KRF3808S) Ƶ Features ƽ VDSS = 75V ƽ RDS(ON) = 0.007Ÿ ƽ ID = 106A ļ ƽ Advanced Process Technology ƽ Ultra Low On-Resistance ƽ Dynamic dv/dt Rating ƽ 175°C Operating Temperature ƽ Fast Switching ƽ Repetitive Avalanche Allowed up to Tjmax D TraMnOsiSsFtoErsT G S Ƶ Absolute Maximum Ratings Ta = 25ć Drain-Source Voltage Parameter Gate-Source Voltage Continuous Drain Current, VGS @ 10V Pulsed Drain Current ķ Power Dissipation Single Pulse Avalanche Energy ĸ Avalanche Current ķ Repetitive Avalanche Energy Ľ Peak Diode Recovery dv/dt Ĺ Thermal Resistance Junction-to-Case Thermal Resistance.Junction- to-Ambient (PCB Mounted, Steady State) ** Junction Temperature Storage Temperature Range TC=25ć TC=100ć TC=25ć Symbol VDS VGS ID IDM PD EAS IAR EAR dv/dt RthJC RthJA TJ Tstg Rating 75 ±20 106 ļ 75 ļ 550 200 430 82 See Fig.12a, 12b, 15, 16 5.5 0.75 40 175 -55 to 175 Unit V A W mJ A mJ V/ns ć/W ć www.kexin.com.cn 1 SMD Type TraMnOsiSstFoErsT N-Channel MOSFET IRF3808S (KRF3808S) Ƶ Electrical Characteristics @ TJ = 25ć(unless otherwise specified) Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Total Gate Charge Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Internal Drain Inductance Internal Source Inductance Symbol VDSS IDSS IGSS VGS(th) RDS(On) gFS Qg Qgs Qgd td(on) tr td(off) tf LD LS Test Conditions ID = 250 ȝA, VGS = 0 V VDS = 75 V, VGS = 0 V VDS = 60 V, VGS = 0 V, TJ = 150 ć VDS=0V, VGS=±20V VDS = 10 V , ID = 250 ȝA VGS = 10 V, ID = 82 A VDS = 25 V, ID = 82 A ID = 82 A VDS = 60 V VGS = 10 V ĺ VDD = 38 V ID = 82 A RG = 2.5 ȍ VGS = 10 V ĺ Between lead, D 6mm (0.25in.) from package G and center of die contact S Min Typ Max Unit 75 V 20 ȝA 250 ±200 nA 2.0 4.0 V 7.0 mȍ 100 S 150 220 31 47 nC 50 76 16 140 ns 68 120 4.5 nH 7.5 Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Ļ Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Ciss Coss Crss Coss Coss Coss eff. trr Qrr VGS = 0 V VDS = 25 V f = 1.0 MHz. See Fig. 5 VGS = 0 V, VDS = 1.0 V, f = 1.0 MHz VGS = 0 V, VDS = 60 V, f = 1.0 MHz VGS = 0 V, VDS = 0V to 60V TJ = 25 ć, IF = 82 A dI/dt = 100 A/ȝs ĺ 5310 890 130 pF 6010 570 1140 140 ns 510 nC Maximum Body-Diode Continuous Current Body-Diode Pulsed Source Current ķ IS MOSFET symbol showing the integral reverse ISM p-n junction diode. D G S 106 A 550 Diode Forward Voltage VSD TJ = 25 ć, IS = 82A, VGS = 0V ĺ 1.3 V Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: ķ Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). ĸ Starting TJ = 25°C, L = 0.130mH, RG = 25Ÿ , IAS = 82A. (See Figure 12). Ĺ ISD İ 82.


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