Isc N-Channel MOSFET Transistor
IRFS38N20D
·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charg...
Isc N-Channel MOSFET
Transistor
IRFS38N20D
·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
200
VGSS ID IDM
Gate-Source Voltage
Drain Current-ContinuousTc=25℃ Tc=100℃
Drain Current-Single Pulsed
±30
43 30
180
PD
Total Dissipation @TC=25℃
300
Tch
Max. Operating Junction Temperature
175
Tstg
Storage Temperature
-55~175
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
MAX 0.47 40
UNIT ℃/W ℃/W
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Isc N-Channel MOSFET
Transistor
IRFS38N20D
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID=0.25mA
200
V
VGS(th)
Gate Threshold Voltage
VDS=VGS; ID=0.25mA
3.0
5.0
V
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID=26A
54
mΩ
IGSS IDSS VSDF
Gate-Source Leakage Current
VGS= ±30V;VDS=0V
Drain-Source Leakage Current
VDS=200V; VGS= 0V;Tj=25℃ VDS=160V; VGS= 0V;Tj=125℃
Diode forward voltage
ISD=26A, VGS = 0 V
±0.1 μA
25 250
μA
1.5
V
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