IRFS59N10D

Isc N-Channel MOSFET Transistor IRFS59N10D ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGSS ID IDM Gate-Source Voltage Drain Current-ContinuousTc=25℃ Tc=100℃ Drain Current-Single Pulsed ±30 59 42 236 PD Total Dissipation @TC=25℃ 200 Tch Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 0.75 40 UNIT ℃/W ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark Isc N-Channel MOSFET Transistor IRFS59N10D ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA 100 V VGS(th) Gate Threshold Voltage VDS=VGS; ID=0.25mA 3.0 5.5 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID=35.4A 25 mΩ IGSS IDSS VSDF Gate-Source Leakage Current VGS= ±30V;VDS= 0V Drain-Source Leakage Current VDS=100V; VGS= 0V;Tj=25℃ VDS=100V; VGS= 0V;Tj=125℃ Diode forward voltage ISD=35.4A, VGS = 0 V ±0.1 μA 20 250 μA 1.3 V NOTICE： ISC reserves the rights to make changes ...