IRFU3704Z

isc N-Channel MOSFET Transistor ·FEATURES ·With TO-251(IPAK) packaging ·High speed switching ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·DC-DC converters ·Motor control ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 20 VGSS Gate-Source Voltage ±20 ID Drain Current-Continuous 60 IDM Drain Current-Single Pulsed 240 PD Total Dissipation 48 Tj Operating Junction Temperature -55~175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 3.1 50 UNIT ℃/W ℃/W IRFU3704Z isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor IRFU3704Z ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA 20 V VGS(th) Gate Threshold Voltage VDS=VGS; ID=0.25mA 1.65 2.55 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID=15A 6.7 8.4 mΩ IGSS IDSS VSDF Gate-Source Leakage Current Drain-Source Leakage Current Diode forward voltage VGS= ±20V;VDS= 0V VDS= 16V; VGS= 0V;Tj=25℃ VDS= 16V; VGS= 0V;Tj=125℃ ISD=12A, VGS =0 V ±0.1 μA 1 150 μA 1.0 V NOTICE： ISC reserves the rights to make changes of the conte...