isc N-Channel MOSFET Transistor
·FEATURES ·With TO-251(IPAK) packaging ·High speed switching ·Easy to use ·100% avalanch...
isc N-Channel MOSFET
Transistor
·FEATURES ·With TO-251(IPAK) packaging ·High speed switching ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Power supply ·DC-DC converters ·Motor control ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
55
VGSS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
30
IDM
Drain Current-Single Pulsed
120
PD
Total Dissipation
48
Tj
Operating Junction Temperature
-55~175
Tstg
Storage Temperature
-55~175
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
MAX 3.12 40
UNIT ℃/W ℃/W
IRFU4105Z
isc website：www.iscsemi.cn
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isc N-Channel MOSFET
Transistor
IRFU4105Z
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA
VGS(th)
Gate Threshold Voltage
VDS=VGS; ID=0.25mA
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID=18A
IGSS IDSS VSDF
Gate-Source Leakage Current Drain-Source Leakage Current Diode forward voltage
VGS= ±20V;VDS= 0V
VDS= 55V; VGS= 0V;Tj=25℃ VDS= 55V; VGS= 0V;Tj=125℃
ISD=18A, VGS =0V
MIN TYP MAX UNIT
55
V
2.0
4.0
V
19
24.5 mΩ
±0.2 μA
20 250
μA
1.3
V
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