isc N-Channel MOSFET Transistor
·FEATURES ·With TO-220F packaging ·High speed switching ·Low gate input resistance ·Stan...
isc N-Channel MOSFET
Transistor
·FEATURES ·With TO-220F packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Power supply ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
200
VGSS ID IDM
Gate-Source Voltage
Drain Current-Continuous@Tc=25℃ Tc=100℃
Drain Current-Single Pulsed
±20
2.5 1.6
12
PD
Total Dissipation
19
Tj
Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
MAX 6.6 62.5
UNIT ℃/W ℃/W
IRLS610A
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isc N-Channel MOSFET
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA
VGS(th)
Gate Threshold Voltage
VDS=5V; ID=0.25mA
RDS(on)
Drain-Source On-Resistance
VGS= 10V; ID=1.25A
IGSS
Gate-Source Leakage Current
VGS=±20V;VDS= 0V
IDSS
Drain-Source Leakage Current
VDS= 200V; VGS= 0V;
VSDF
Diode forward voltage
ISD=2.5A, VGS = 0 V
IRLS610A
MIN TYP MAX UNIT
200
V
1.0
2.0
V
1.5
Ω
±0.1 μA
10
μA
1.5
V
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