isc N-Channel MOSFET Transistor
·FEATURES ·With TO-251(IPAK) packaging ·High speed switching ·Easy to use ·100% avalanch...
isc N-Channel MOSFET
Transistor
·FEATURES ·With TO-251(IPAK) packaging ·High speed switching ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Power supply ·DC-DC converters ·Motor control ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
100
VGSS ID IDM
Gate-Source Voltage Drain Current-Continuous Drain Current-Single Pulsed
±20
4.7 3
16
PD
Total Dissipation
22
Tj
Operating Junction Temperature
-55~150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
MAX 5.6 50
UNIT ℃/W ℃/W
IRLU110A
isc website：www.iscsemi.cn
1 isc & iscsemi is registered trademark
isc N-Channel MOSFET
Transistor
IRLU110A
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA
100
VGS(th)
Gate Threshold Voltage
VDS=VGS; ID=0.25mA
1.0
RDS(on)
Drain-Source On-Resistance
VGS= 5V; ID=2.35A
IGSS IDSS VSDF
Gate-Source Leakage Current Drain-Source Leakage Current Diode forward voltage
VGS= ±20V;VDS= 0V
VDS= 100V; VGS= 0V;Tj=25℃ VDS= 80V; VGS= 0V;Tj=125℃
ISD=4.7A, VGS = 0 V
V
2.0
V
0.44
Ω
±0.1 μA
10 100
μA
1.5
V
NOTICE： ISC reserves the rights to make changes of the content he...
