Isc N-Channel MOSFET Transistor
ITK65G10N1
·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charg...
Isc N-Channel MOSFET
Transistor
ITK65G10N1
·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
100
VGSS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
136
IDM
Drain Current-Single Pulsed
283
PD
Total Dissipation @TC=25℃
156
Tch
Max. Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
MAX 0.8 62
UNIT ℃/W ℃/W
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Isc N-Channel MOSFET
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID=10mA
VGS(th)
Gate Threshold Voltage
VDS=VGS; ID=1.0mA
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID=32.5A
IGSS
Gate-Source Leakage Current
VGS= ±20V;VDS=0V
IDSS
Drain-Source Leakage Current VDS=100V; VGS= 0V;
VSDF
Diode forward voltage
ISD=65A, VGS = 0 V
ITK65G10N1
MIN TYP MAX UNIT
100
V
2.0
4.0
V
3.8
4.5
mΩ
±0.1 μA
10
μA
1.2
V
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