IXFP20N85X

isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220 packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 850 VGSS Gate-Source Voltage ±30 ID Drain Current-Continuous 20 IDM Drain Current-Single Pulsed 50 PD Total Dissipation 540 Tj Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 0.5 70 UNIT ℃/W ℃/W IXFP20N85X isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor IXFP20N85X ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 1.0mA VGS(th) Gate Threshold Voltage VDS=VGS; ID=2.5mA RDS(on) Drain-Source On-Resistance VGS= 10V; ID=10A IGSS Gate-Source Leakage Current VGS=±30V;VDS= 0V IDSS Drain-Source Leakage Current VDS= 850V; VGS= 0V;Tj=25℃ VSDF Diode forward voltage ISD=20A, VGS = 0 V MIN TYP MAX UNIT 850 V 3.5 5.5 V 330 mΩ ±0.1 μA 25 μA 1.4 V NOTICE： ISC reserves the rights to make changes of the content herein the d...