isc N-Channel MOSFET Transistor
·FEATURES ·With TO-220F packaging ·High speed switching ·Low gate input resistance ·Stan...
isc N-Channel MOSFET
Transistor
·FEATURES ·With TO-220F packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Power supply ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
200
VGSS
Gate-Source Voltage
±30
ID
Drain Current-Continuous
36
IDM
Drain Current-Single Pulsed
50
PD
Total Dissipation
36
Tj
Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
MAX 3.5 62.5
UNIT ℃/W ℃/W
IXFP36N20X3M
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isc N-Channel MOSFET
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA
VGS(th)
Gate Threshold Voltage
VDS=VGS; ID=0.5mA
RDS(on)
Drain-Source On-Resistance
VGS= 18V; ID=18A
IGSS
Gate-Source Leakage Current
VGS=±20V;VDS= 0V
IDSS
Drain-Source Leakage Current
VDS= 200V; VGS= 0V;
VSDF
Diode forward voltage
ISD=36A, VGS = 0 V
IXFP36N20X3M
MIN TYP MAX UNIT
200
V
2.5
4.5
V
38
mΩ
±0.1 μA
5
μA
1.4
V
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