isc N-Channel MOSFET Transistor
·FEATURES ·With TO-247 packaging ·With low gate drive requirements ·Easy to drive ·100% ...
isc N-Channel MOSFET
Transistor
·FEATURES ·With TO-247 packaging ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
100
VGSS
Gate-Source Voltage
±30
ID
Drain Current-Continuous
420
IDM
Drain Current-Single Pulsed
1000
PD
Total Dissipation
1670
Tj
Operating Junction Temperature
-55~175
Tstg
Storage Temperature
-55~175
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
MAX 0.09
UNIT ℃/W
IXFX420N10T
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isc N-Channel MOSFET
Transistor
IXFX420N10T
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= 3.0mA
100
VGS(th)
Gate Threshold Voltage
VDS=VGS; ID=8.0mA
2.5
RDS(on)
Drain-Source On-Resistance
VGS= 10V; ID=60A
IGSS IDSS VSDF
Gate-Source Leakage Current Drain-Source Leakage Current Diode forward voltage
VGS= ±20V;VDS= 0V
VDS= 100V; VGS= 0V;@Tc=25℃ VDS= 100V; VGS= 0V;Tc=150℃
ISD=60A, VGS = 0V
V
5.0
V
2.6
mΩ
±0.2 μA
50 5000
μA
1.2
V
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