Power MOSFET
X2-Class HiPERFET Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXFA12N65X2 IXFP12N65X2 IXFH12N65X2
Symbol
V...
Description
X2-Class HiPERFET Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXFA12N65X2 IXFP12N65X2 IXFH12N65X2
Symbol
VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt
PD TJ TJM Tstg TL TSOLD FC Md Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient
Maximum Ratings
650
V
650
V
30
V
40
V
TC = 25C TC = 25C, Pulse Width Limited by TJM
TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 150°C TC = 25C
12 24
6 300
50 180 -55 ... +150 150 -55 ... +150
A A
A mJ V/ns
W C C C
Maximum Lead Temperature for Soldering
300
°C
1.6 mm (0.062in.) from Case for 10s
260
°C
Mounting Force (TO-263)
10..65 / 2.2..14.6
Mounting Torque (TO-220 & TO-247)
1.13 / 10
N/lb Nm/lb.in
TO-263 TO-220 TO-247
2.5
g
3.0
g
6.0
g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 250μA
IGSS
VGS = 30V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
TJ = 125C
RDS(on)
VGS = 10V, ID = 0.5 ID25, Note 1
Characteristic Values Min. Typ. Max.
650
V
3.0
5.0 V
100 nA
10 A 500 A
310 m
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VDSS =
ID25 = RDS(on)
650V 12A 310m
TO-263 (IXFA)
G S
TO-220 (IXFP)
D (Tab)
G DS
TO-247 (IXFH)
D (Tab)
G D S
D (Tab)
G = Gate
D = Drain
S = Source Tab = Drain
Features
International Standard Packages Low RDS(ON) and QG Avalanche Rated Low Package Inductance
Advantages
High Power Density Easy to Mount S...
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