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IXFA12N65X2

IXYS

Power MOSFET

X2-Class HiPERFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXFA12N65X2 IXFP12N65X2 IXFH12N65X2 Symbol V...


IXYS

IXFA12N65X2

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X2-Class HiPERFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXFA12N65X2 IXFP12N65X2 IXFH12N65X2 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 650 V 650 V 30 V 40 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C 12 24 6 300 50 180 -55 ... +150 150 -55 ... +150 A A A mJ V/ns W C C C Maximum Lead Temperature for Soldering 300 °C 1.6 mm (0.062in.) from Case for 10s 260 °C Mounting Force (TO-263) 10..65 / 2.2..14.6 Mounting Torque (TO-220 & TO-247) 1.13 / 10 N/lb Nm/lb.in TO-263 TO-220 TO-247 2.5 g 3.0 g 6.0 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 0.5 ID25, Note 1 Characteristic Values Min. Typ. Max. 650 V 3.0 5.0 V 100 nA 10 A 500 A 310 m © 2018 IXYS CORPORATION, All Rights Reserved VDSS = ID25 =  RDS(on) 650V 12A 310m TO-263 (IXFA) G S TO-220 (IXFP) D (Tab) G DS TO-247 (IXFH) D (Tab) G D S D (Tab) G = Gate D = Drain S = Source Tab = Drain Features  International Standard Packages  Low RDS(ON) and QG  Avalanche Rated  Low Package Inductance Advantages  High Power Density  Easy to Mount  S...




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