isc N-Channel MOSFET Transistor
MMF80R1K2P
·FEATURES · Drain-source on-resistance:
RDS(on) ≤ 1.2Ω@10V ·Fast Switching ...
isc N-Channel MOSFET
Transistor
MMF80R1K2P
·FEATURES · Drain-source on-resistance:
RDS(on) ≤ 1.2Ω@10V ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·High fast switching Power Supply
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
800
VGS
Gate-Source Voltage
±30
ID
Drain Current-Continuous
4.5
IDM
Drain Current-Single Pulsed
13.5
PD
Total Dissipation @TC=25℃
28
Tj
Max. Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
MAX 4.4
UNIT ℃/W
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isc N-Channel MOSFET
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= 250μA
VGS(th)
Gate Threshold Voltage
VDS= VGS; ID= 250μA
RDS(on)
Drain-Source On-Resistance
VGS=10V; ID=2.5A
IGSS
Gate-Source Leakage Current
VGS= ±30V;VDS= 0V
IDSS
Drain-Source Leakage Current
VDS=400V; VGS= 0V
VSD
Diode forward on voltage
IS =4.5A, VGS = 0 V
MMF80R1K2P
MIN TYP MAX UNIT
800
V
2
4
V
1.2
Ω
±100 nA
1
μA
1.4
V
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