N-Channel MOSFET. PHD44N06LT Datasheet

PHD44N06LT MOSFET. Datasheet pdf. Equivalent

Part PHD44N06LT
Description N-Channel MOSFET
Feature Isc N-Channel MOSFET Transistor PHD44N06LT ·FEATURES ·With To-252(DPAK) package ·Low input capacit.
Manufacture INCHANGE
Datasheet
Download PHD44N06LT Datasheet

Philips Semiconductors Product specification TrenchMOS™ tr PHD44N06LT Datasheet
Isc N-Channel MOSFET Transistor PHD44N06LT ·FEATURES ·With PHD44N06LT Datasheet
Recommendation Recommendation Datasheet PHD44N06LT Datasheet




PHD44N06LT
Isc N-Channel MOSFET Transistor
PHD44N06LT
·FEATURES
·With To-252(DPAK) package
·Low input capacitance and gate charge
·Low gate input resistance
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
55
VGSS
ID
IDM
Gate-Source Voltage
Drain Current-Continuous@Tc=25
Tc=100
Drain Current-Single Pulsed
±13
44
31
176
PD
Total Dissipation @TC=25
114
Tch
Max. Operating Junction Temperature
175
Tstg
Storage Temperature
-55~175
UNIT
V
V
A
A
W
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
MAX
55
1.31
UNIT
/W
/W
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PHD44N06LT
Isc N-Channel MOSFET Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA
VGS(th)
Gate Threshold Voltage
VDS=5V; ID=1.0mA
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID=20A
IGSS
Gate-Source Leakage Current
VGS=±5V;VDS= 0V
IDSS
Drain-Source Leakage Current VDS=55V; VGS= 0V
VSDF
Diode forward voltage
ISD=25A, VGS = 0 V
PHD44N06LT
MIN TYP MAX UNIT
55
V
1.0
2.0
V
20
26
mΩ
1
μA
10
μA
1.2
V
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark





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