isc N-Channel MOSFET Transistor
·FEATURES ·With TO-220F packaging ·High speed switching ·Low gate input resistance ·Stan...
isc N-Channel MOSFET
Transistor
·FEATURES ·With TO-220F packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Power supply ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
600
VGSS
Gate-Source Voltage
±30
ID
Drain Current-Continuous
18
IDM
Drain Current-Single Pulsed
54
PD
Total Dissipation
72
Tj
Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
MAX 1.76 70
UNIT ℃/W ℃/W
R6018JNX
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isc N-Channel MOSFET
Transistor
R6018JNX
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= 1.0mA
VGS(th)
Gate Threshold Voltage
VDS=VGS; ID=4.2mA
RDS(on)
Drain-Source On-Resistance
VGS= 10V; ID=9.0A
IGSS
Gate-Source Leakage Current
VGS=±30V;VDS= 0V
IDSS
Drain-Source Leakage Current
VDS= 600V; VGS= 0V;Tc=25℃
VSDF
Diode forward voltage
ISD=18A, VGS = 0 V
MIN TYP MAX UNIT
600
V
5.0
7.0
V
0.22 0.286
Ω
±0.1 μA
100
μA
1.7
V
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