isc N-Channel MOSFET Transistor
·FEATURES ·With TO-247 packaging ·With low gate drive requirements ·Easy to drive ·100% ...
isc N-Channel MOSFET
Transistor
·FEATURES ·With TO-247 packaging ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
400
VGSS ID IDM
Gate-Source Voltage
Drain Current-Continuous @Tc=25℃ Tc=100℃
Drain Current-Single Pulsed
±20
16 10
64
PD
Total Dissipation
190
Tj
Operating Junction Temperature
-55~150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
MAX 0.65
UNIT ℃/W
SiHFP350
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isc N-Channel MOSFET
Transistor
SiHFP350
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA
400
VGS(th)
Gate Threshold Voltage
VDS=VGS; ID=0.25mA
2.0
RDS(on)
Drain-Source On-Resistance
VGS= 10V; ID=9.6A
IGSS IDSS VSDF
Gate-Source Leakage Current Drain-Source Leakage Current Diode forward voltage
VGS= ±20V;VDS= 0V
VDS= 400V; VGS= 0V;@Tc=25℃ VDS= 320V; VGS= 0V;Tc=125℃
ISD=16A, VGS = 0 V
V
4.0
V
300
mΩ
±0.1 μA
25 250
μA
1.6
V
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