STD11NM50N

Isc N-Channel MOSFET Transistor STD11NM50N ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@Tc=25℃ Tc=100℃ Drain Current-Single Pulsed ±25 8.5 6 34 PD Total Dissipation @TC=25℃ 70 Tch Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 50 1.79 UNIT ℃/W ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark Isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 1mA VGS(th) Gate Threshold Voltage VDS=VGS; ID=0.25mA RDS(on) Drain-Source On-Resistance VGS= 10V; ID=4.5A IGSS Gate-Source Leakage Current VGS=±25V;VDS= 0V IDSS Drain-Source Leakage Current VDS=500V; VGS= 0V VSDF Diode forward voltage ISD=8.5A, VGS = 0V STD11NM50N MIN TYP MAX UNIT 500 V 2.0 4.0 V 400 470 mΩ ±0.1 μA 1 μA 1.5 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at an...