Isc N-Channel MOSFET Transistor
STD14NM50N
·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge...
Isc N-Channel MOSFET
Transistor
STD14NM50N
·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
500
VGSS ID IDM
Gate-Source Voltage
Drain Current-Continuous@Tc=25℃ Tc=100℃
Drain Current-Single Pulsed
±25
12 8
48
PD
Total Dissipation @TC=25℃
25
Tch
Max. Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
MAX 1.39 62.5
UNIT ℃/W ℃/W
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Isc N-Channel MOSFET
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= 1.0mA
VGS(th)
Gate Threshold Voltage
VDS=VGS; ID=0.1mA
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID=6A
IGSS
Gate-Source Leakage Current
VGS= ±25V;VDS= 0V
IDSS
Drain-Source Leakage Current VDS=500V; VGS= 0V
VSDF
Diode forward voltage
ISD=12A, VGS = 0 V
STD14NM50N
MIN TYP MAX UNIT
500
V
2.0
4.0
V
280 320
mΩ
±0.1 μA
1
μA
1.6
V
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