isc N-Channel MOSFET Transistor
·FEATURES ·With TO-220F packaging ·High speed switching ·Low gate input resistance ·Stan...
isc N-Channel MOSFET
Transistor
·FEATURES ·With TO-220F packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Power supply ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
600
VGSS ID IDM
Gate-Source Voltage
Drain Current-Continuous @Tc=25℃ Tc=100℃
Drain Current-Single Pulsed
±25
13 8
52
PD
Total Dissipation
25
Tj
Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
MAX 5
62.5
UNIT ℃/W ℃/W
STF18N60M2
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isc N-Channel MOSFET
Transistor
STF18N60M2
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA
600
V
VGS(th)
Gate Threshold Voltage
VDS=VGS; ID=0.25mA
2.0
4.0
V
RDS(on)
Drain-Source On-Resistance
VGS= 10V; ID=6.5A
255 280
mΩ
IGSS IDSS VSDF
Gate-Source Leakage Current Drain-Source Leakage Current Diode forward voltage
VGS=±25V;VDS= 0V
VDS= 600V; VGS= 0V;Tc=25℃ VDS= 600V; VGS= 0V;Tc=125℃
ISD=13A, VGS = 0 V
±10 μA
1 100
μA
1.6
V
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