Isc N-Channel MOSFET Transistor
·FEATURES ·Typical RDS(on)=0.038Ω ·Application oriented characterization ·Easy to drive...
Isc N-Channel MOSFET
Transistor
·FEATURES ·Typical RDS(on)=0.038Ω ·Application oriented characterization ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·High-efficiency DC-DC coverters ·Motor control
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
100
VGSS
Gate-Source Voltage
±20
ID
Drain Current-Continuous@TC=25℃
35
IDM
Drain Current-Single Pulsed
140
PD
Total Dissipation
115
Tj
Operating Junction Temperature
-55~175
Tstg
Storage Temperature
-55~175
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
MAX 1.3 62.5
UNIT ℃/W ℃/W
STP30NF10
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Isc N-Channel MOSFET
Transistor
STP30NF10
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA
100
V
VGS(th)
Gate Threshold Voltage
VDS=±20V; ID=0.25mA
2
4
V
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID=15A
38
45
mΩ
IGSS IDSS VSDF
Gate-Source Leakage Current Drain-Source Leakage Current Diode forward voltage
VGS= ±20V;VDS= 0V
VDS= 100V; VGS= 0V;TJ=25℃ TJ=125℃
ISD=30A, VGS = 0 V
±0.1 μA
1 10
μA
1.3
V
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