R8005ANX

R8005ANX Nch 800V 5A Power MOSFET Datasheet VDSS RDS(on) (Max.) ID PD Features 1) Low on-resistance. 800V 2.08 5A 51W Outline TO-220FM Inner circuit (1) (2) (3) 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V. 4) Drive circuits can be simple. (1) 5) Parallel use is easy. ∗1 (2) (3) (1) Gate (2) Drain (3) Source 1 BODY DIODE 6) Pb-free lead plating ; RoHS compliant Packaging specifications Packaging Bulk Reel size (mm) - Application Switching Power Supply Tape width (mm) - Type Basic ordering unit (pcs) 500 Taping code - Marking R8005ANX Absolute maximum ratings(Ta = 25°C) Parameter Symbol Value Unit Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage Avalanche energy, single pulse Avalanche energy, repetitive Avalanche current Power dissipation (Tc = 25°C) Junction temperature Range of storage temperature Reverse diode dv/dt Tc = 25°C Tc = 100°C VDSS ID *1 ID *1 ID,pulse *2 VGSS EAS *3 EAR *4 IAR *3 PD Tj Tstg dv/dt *5 800 5 2.4 20 30 1.66 1.3 2.5 51 150 55 to 150 15 V A A A V mJ mJ A W °C °C V/ns www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 1/13 2016.02 - Rev.B R8005ANX Absolute maximum ratings Parameter Drain - Source voltage slope Data Sheet Symbol Conditions dv/dt VDS = 640V, ID = 5A Tj = 125°C Values Unit 50 V/ns Thermal resistance Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient Soldering temper...