SUD50P06-15

www.vishay.com SUD50P06-15 Vishay Siliconix P-Channel 60 V (D-S) MOSFET TO-252 Drain connected to tab FEATURES TrenchFET® power MOSFET Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 S D G Top View PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = -10 V RDS(on) max. () at VGS = -4.5 V ID (A) d Configuration -60 0.015 0.020 -50 Single APPLICATIONS Load switch S G D P-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and halogen-free TO-252 SUD50P06-15-GE3 SUD50P06-15-T4-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage VDS Gate-source voltage Continuous drain current (TJ = 175 °C) VGS TC = 25 °C TC = 125 °C ID Pulsed drain current Avalanche current Single pulse avalanche energy a IDM IAS L = 0.1 mH EAS Power dissipation Operating junction and storage temperature range TC = 25 °C TA = 25 °C PD TJ, Tstg LIMIT -60 ± 20 -50 d -27.5 -80 -50 125 113 c 2.5 b, c -55 to +150 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-ambient b Junction-to-case Notes a. Duty cycle  1% b. When mounted on 1" square PCB (FR4 material) c. See SOA curve for voltage derating d. Package limited t  10 s Steady state SYMBOL RthJA RthJC TYPICAL 15 40 0.82 MAXIMUM 18 50 1.1 UNIT °C/W S19-0387 Rev. D, 29-Apr-2019 1 Document Number: 68940 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOU...