NVD4C05N

NVD4C05N MOSFET – Power, Single, N-Channel 30 V, 4.1 mW, 90 A Features Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 30 V Gate−to−Source Voltage VGS ±20 V Continuous Drain Current RqJC (Notes 1 & 3) TC = 25°C ID Steady TC = 100°C Power Dissipation RqJC State TC = 25°C PD (Note 1) TC = 100°C 90 A 64 57 W 28 Continuous Drain Current RqJA (Notes 1, 2 & 3) TA = 25°C ID Steady TA = 100°C Power Dissipation RqJA State TA = 25°C PD (Notes 1 & 2) TA = 100°C 22 A 16 3.5 W 1.7 Pulsed Drain Current TA = 25°C, tp = 10 ms IDM 395 A Operating Junction and Storage Temperature TJ, Tstg − 55 to °C 175 Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, IL(pk) = 6.9 A) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) IS 75 A EAS 133 mJ TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction−to−Case (Drain) (Note 1) RqJC 2.65 °C/W Junction−to−Ambient − Steady State (Note 2) RqJA 43 ...