2SJ598

isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤130mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Built in gate protection diode ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -60 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous ±12 IDM Drain Current-Single Pulsed ±30 PD Total Dissipation @TC=25℃ 23 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ 2SJ598 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc P-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID=1mA VGS(th) Gate Threshold Voltage VDS=-10V; ID=1mA RDS(on) Drain-Source On-Resistance VGS=-10V; ID=-6A IGSS Gate-Source Leakage Current VGS=±16V;VDS= 0V IDSS Drain-Source Leakage Current VDS=-60V; VGS= 0V VSD Diode forward voltage IF=12A, VGS = 0V 2SJ598 MIN TYP MAX UNIT -60 V -1.5 -2.5 V 130 mΩ ±10 μA -10 μA 0.98 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products...