2SK2608

isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤3.78Ω(TYP) ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION · Efficient and reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 900 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 3 IDM Drain Current-Single Pulsed 9 PD Total Dissipation @TC=25℃ 100 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 1.25 83.3 UNIT ℃/W ℃/W 2SK2608 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID =10mA VGS(th) Gate Threshold Voltage VDS=VGS; ID =1mA RDS(on) Drain-Source On-Resistance VGS=10V; ID=1.5A IGSS Gate-Source Leakage Current VGS= ±30V IDSS Drain-Source Leakage Current VDS=720V; VGS= 0V VSD Diode forward voltage IF=3A; VGS = 0V 2SK2608 MIN TYP MAX UNIT 900 V 2 4 V 4.3 Ω 10 μA 100 μA 1.9 V NOTICE： ISC reserves the rights to make changes of the content herein the datas...