isc N-Channel MOSFET Transistor
·FEATURES · Drain-source on-resistance:
RDS(on) ≤ 0.52Ω@10V ·Low leakage current:
IDSS ...
isc N-Channel MOSFET
Transistor
·FEATURES · Drain-source on-resistance:
RDS(on) ≤ 0.52Ω@10V ·Low leakage current:
IDSS <100 µA @VDS = 500 V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Switching
Regulator Applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
500
VGS
Gate-Source Voltage
±30
ID
Drain Current-Continuous
12
IDM
Drain Current-Single Pulsed
48
PD
Total Dissipation @TC=25℃
40
Tj
Max. Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
MAX 3.125
UNIT ℃/W
2SK3568
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isc N-Channel MOSFET
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= 10mA
VGS(th)
Gate Threshold Voltage
VDS= 10V; ID= 1mA
RDS(on)
Drain-Source On-Resistance
VGS=10V; ID=6A
IGSS
Gate-Source Leakage Current
VGS= ±25V;VDS= 0V
IDSS
Drain-Source Leakage Current
VDS=500V; VGS= 0V
VSD
Diode forward voltage
IS=12A, VGS = 0 V
2SK3568
MIN TYP MAX UNIT
500
V
2
4
V
0.52
Ω
±10
µA
100 μA
1.7
V
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