2SK3591

isc N-Channel MOSFET Transistor ·FEATURES · Drain-source on-resistance: RDS(on) ≤ 41mΩ@10V ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High fast switching Power Supply ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 150 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 40 IDM Drain Current-Single Pulsed 160 PD Total Dissipation @TC=25℃ 70 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 1.79 UNIT ℃/W 2SK3591 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor 2SK3591 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 250μA 150 VGS(th) Gate Threshold Voltage VDS= VGS; ID= 250μA 3 V 5 V RDS(on) Drain-Source On-Resistance VGS=10V; ID=20A 41 mΩ IGSS Gate-Source Leakage Current VGS= ±30V;VDS= 0V VDS=150V; VGS= 0V IDSS Drain-Source Leakage Current VDS=120V; VGS= 0V;Tj=150℃ VSD Diode forward voltage IF=40A, VGS = 0 V ±100 nA 25 μA 250 1.65 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein i...