2SK3591-01MR
FUJI POWER MOSFET
Super FAP-G Series
Features High speed switching Low on-resistance No secondary breadown ...
2SK3591-01MR
FUJI POWER MOSFET
Super FAP-G Series
Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
200304
N-CHANNEL SILICON POWER MOSFET
Outline Drawings (mm)
TO-220F
Applications Switching
regulators UPS (Uninterruptible Power Supply) DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Ratings
Unit
Drain-source voltage
VDS
150
V
VDSX *5
120
V
Continuous drain current Pulsed drain current
ID ID(puls]
±57
A
±228
A
Equivalent circuit schematic
Gate-source voltage
VGS
±30
V
Non-repetitive Avalanche current IAS *2
Maximum Avalanche Energy
EAS *1
57
A
272.5
mJ
Drain(D)
Maximum Drain-Source dV/dt
dVDS/dt *4
20
kV/µs
Peak Diode Recovery dV/dt
dV/dt *3
5
kV/µs
Max. power dissipation
PD Ta=25°C Tc=25°C
2.16
W
95
Gate(G)
Operating and storage
Tch
+150
°C
Source(S)
temperature range
Tstg
-55 to +150
°C
Isolation voltage
VISO *6
2
kVrms
*1 L=123µH, Vcc=48V, See to Avalanche Energy Graph *2 Tch <=150°C *3 IF<= -ID, -di/dt=50A/µs, Vcc<= BVDSS, Tch<= 150°C *4 VDS <= 150V *5 VGS=-30V *6 t=60sec f=60Hz
Electrical characteristics (Tc =25°C unless otherwise specified)
Item Drain-source breakdown voltaget Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance ...
