POWER MOSFET. 2SK3591-01MR Datasheet

2SK3591-01MR MOSFET. Datasheet pdf. Equivalent

Part 2SK3591-01MR
Description N-CHANNEL SILICON POWER MOSFET
Feature 2SK3591-01MR FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No.
Manufacture Fuji Electric
Datasheet
Download 2SK3591-01MR Datasheet

2SK3591-01MR FUJI POWER MOSFET Super FAP-G Series Features H 2SK3591-01MR Datasheet
Recommendation Recommendation Datasheet 2SK3591-01MR Datasheet




2SK3591-01MR
2SK3591-01MR
FUJI POWER MOSFET
Super FAP-G Series
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
200304
N-CHANNEL SILICON POWER MOSFET
Outline Drawings (mm)
TO-220F
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Ratings
Unit
Drain-source voltage
VDS
150
V
VDSX *5
120
V
Continuous drain current
Pulsed drain current
ID
ID(puls]
±57
A
±228
A
Equivalent circuit schematic
Gate-source voltage
VGS
±30
V
Non-repetitive Avalanche current IAS *2
Maximum Avalanche Energy
EAS *1
57
A
272.5
mJ
Drain(D)
Maximum Drain-Source dV/dt
dVDS/dt *4
20
kV/µs
Peak Diode Recovery dV/dt
dV/dt *3
5
kV/µs
Max. power dissipation
PD Ta=25°C
Tc=25°C
2.16
W
95
Gate(G)
Operating and storage
Tch
+150
°C
Source(S)
temperature range
Tstg
-55 to +150
°C
Isolation voltage
VISO *6
2
kVrms
*1 L=123µH, Vcc=48V, See to Avalanche Energy Graph *2 Tch <=150°C
*3 IF<= -ID, -di/dt=50A/µs, Vcc<= BVDSS, Tch<= 150°C *4 VDS <= 150V *5 VGS=-30V *6 t=60sec f=60Hz
Electrical characteristics (Tc =25°C unless otherwise specified)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Test Conditions
ID= 250µA VGS=0V
ID= 250µA VDS=VGS
VDS=150V VGS=0V
VDS=120V VGS=0V
VGS=±30V VDS=0V
Tch=25°C
Tch=125°C
ID=20A VGS=10V
ID=20A VDS=25V
VDS=75V
VGS=0V
f=1MHz
VCC=48V ID=20A
VGS=10V
RGS=10
VCC=75V
ID=40A
VGS=10V
L=123µH Tch=25°C
IF=40A VGS=0V Tch=25°C
IF=40A VGS=0V
-di/dt=100A/µs Tch=25°C
Min. Typ. Max. Units
150
V
3.0
5.0 V
25
µA
250
10
100
nA
31
41
m
13
26
S
1940 2910
pF
310
465
24
36
20
30
ns
26
39
50
75
20
30
52
78
nC
15
22.5
18
27
57
A
1.10
1.65 V
0.14
µs
0.77
µC
Thermalcharacteristics
Item
Thermal resistance
www.fujielectric.co.jp/denshi/scd
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min. Typ.
Max. Units
1.316 °C/W
58.0 °C/W
1



2SK3591-01MR
2SK3591-01MR
Characteristics
Allowable Power Dissipation
PD=f(Tc)
100
80
60
40
20
0
0
25
50
75
100
125
150
Tc [°C]
Typical Output Characteristics
ID=f(VDS):80µs Pulse test,Tch=25°C
160
20V
10V
120
8V
80
7.5V
7.0V
40
6.5V
6.0V
VGS=5.5V
0
0
2
4
6
8
10
12
VDS [V]
Typical Transconductance
gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C
100
10
1
0.1
0.1
1
10
100
ID [A]
FUJI POWER MOSFET
Maximum Avalanche Energy vs. starting Tch
E =f(starting Tch):Vcc=48V
AS
1000
800
I =23A
600 AS
400
I =35A
AS
I =57A
200 AS
0
0
25
50
75
100
125
150
starting Tch [°C]
Typical Transfer Characteristic
ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C
100
10
1
0.1
0 1 2 3 4 5 6 7 8 9 10
VGS[V]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80µs Pulse test, Tch=25°C
0.15
VGS=
5.5V 6.0V 6.5V 7.0V
0.12
7.5V
0.09
8V
10V
0.06
20V
0.03
0.00
0
40
80
120
160
ID [A]
2





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