AOT210L

isc N-Channel MOSFET Transistor ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤2.9mΩ ·High frequency switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·For fast switching power supply ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 30 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 105 IDM Drain Current-Single Pulsed 400 PD Total Dissipation @TC=25℃ 176 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 0.85 65 UNIT ℃/W ℃/W AOT210L isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID = 250μA VGS(th) Gate Threshold Voltage VDS=VGS; ID=250μA RDS(on) Drain-Source On-Resistance VGS=10V; ID=20A IGSS Gate-Source Leakage Current VGS=20V; VDS= 0V VDS=30V; VGS= 0V IDSS Drain-Source Leakage Current VDS=30V; VGS= 0V; Tj=55℃ VSD Diode forward voltage IS =1A; VGS = 0V AOT210L MIN TYP MAX UNIT 30 V 1 2.2 V 2.9 mΩ 100 nA 1 μA 5 μA 1 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time w...