AOTF16N50

isc N-Channel Mosfet Transistor AOTF16N50 ·FEATURES ·Drain Current ID= 16A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Low ON Resistance RDS(on) = 0.37Ω(Max) ·Low leakage current ·Fast Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Designed for high efficiency switch mode power supply. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 16 A IDM Drain Current-Single Plused 64 A PD Power Dissipation 50 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature range -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 2.5 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 65 ℃/W isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA VGS(th) Gate Threshold Voltage VDS= VGS; ID= 1mA RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 8A IGSS Gate-Body Leakage Current VGS= ±30V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 500V; VGS= 0 VSD Forward On-Voltage IS= 16A; VGS= 0 AOTF16N50 MIN MAX UNIT 500 V 2.5 4.5 V 0.37 Ω ±100 nA 1 μA 1 V NOTICE： ISC reserves the rights to m...