FCD850N80Z

isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤850mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·LED lighting ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 800 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 6 IDM Drain Current-Single Pulsed 18 PD Total Dissipation @TC=25℃ 75 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance Rth(j-a) Channel-to-ambient thermal resistance MAX 1.65 100 UNIT ℃/W ℃/W FCD850N80Z isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID=1mA VGS(th) Gate Threshold Voltage VDS=VGS; ID=0.6mA RDS(on) Drain-Source On-Resistance VGS=10V; ID=3A IGSS Gate-Source Leakage Current VGS= ±20V IDSS Drain-Source Leakage Current VDS=800V; VGS= 0V VSD Diode forward voltage ISD=6A, VGS = 0V FCD850N80Z MIN TYP MAX UNIT 800 V 2.5 4.5 V 850 mΩ ±10 μA 25 μA 1.2 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information containe...